Intrinsic parameter fluctuations in decananometer mosfets introduced by gate line edge roughness

Intrinsic Parameter Fluctuations in Decananometer MOSFETs Introduced by Gate Line Edge Roughness

In this paper, we use statistical three-dimensional (3-D) simulations to study the impact of the gate line edge roughness (LER) on the intrinsic parameters fluctuations in deep decananometer (sub 50 nm) gate MOSFETs. The line edge roughness is introduced using a Fourier synthesis technique based on the power spectrum of a Gaussian autocorrelation function. In carefully designed simulation exper...

Simulation of Intrinsic Parameter Fluctuations in Decananometer and Nanometer-Scale MOSFETs

Intrinsic parameter fluctuations introduced by discreteness of charge and matter will play an increasingly important role when semiconductor devices are scaled to decananometer and nanometer dimensions in next-generation integrated circuits and systems. In this paper, we review the analytical and the numerical simulation techniques used to study and predict such intrinsic parameters fluctuation...

Intrinsic Fluctuations in Sub 10-nm Double-Gate MOSFETs Introduced by Discreteness of Charge and Matter

We study, using numerical simulation, the intrinsic parameter fluctuations in sub 10 nm gate length double gate MOSFETs introduced by discreteness of charge and atomicity of matter. The employed “atomistic” drift-diffusion simulation approach includes quantum corrections based on the density gradient formalism. The quantum confinement and source-to-drain tunnelling effects are carefully calibra...

Intrinsic Parameter Fluctuations in Scaled MOSFETs

Intrinsic parameter fluctuations in nanometre scale thin-body SOI devices introduced by interface roughness

An investigation is presented into intrinsic parameter fluctuations in thin-body SOI MOSFETs due to local variations in body thickness as a result of interface roughness. A series of well scaled devices from 15 nm channel length down to 5 nm are investigated using three-dimensional drift-diffusion simulations which include the density gradient equation to account for quantum mechanical effects....